包装：每盒4片 面积：8mm*8mm单片  基底：二氧化硅基底

Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO₂/Si substrates (p-doped), 8 mm x 8 mm: 4 pack

Properties of BN film

• 95% coverage

• High Crystalline Quality

• The Raman spectrum should peak at ~1369cm-¹

  

  The Raman Signal of BN on SiO₂/Si is very weak. To characterize h-BN on SiO₂/Si using Raman spectroscopy, you need to use a blue or high power laser and the signal may not be detectable on certain commercial systems. For more information regarding Raman spectroscopy and characterization of h-BN on SiO₂/Si, refer to the following paper: Hunting for Monolayer Boron Nitride: Optical and Raman Signatures .

  The h-BN film is grown via CVD onto copper foil, then transferred to the SiO₂/Si substrate. To see characterizations of the film before transfer, see our related product, h-BN on Copper Foil.

  
  

  Applications:

  
  

  BN on SiO2/Si wafers are ideal for creating graphene/BN interfaces, allowing the graphene to be precisely gated, increasing mobility, and reducing scattering. h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene. Using our h-BN on SiO2/Si wafers in conjunction with graphene, we encourage you to explore graphene heterostructures for transistor applications.